首页> 外文OA文献 >Time-efficient sintering processes to attach power devices using nanosilver dry film
【2h】

Time-efficient sintering processes to attach power devices using nanosilver dry film

机译:省时的烧结工艺,使用纳米银干膜连接功率器件

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

Pressure-assisted sintering processes to attach power devices using wet nanosilver pastes with time scales of minutes to a few hours have been widely reported. This paper presents our work on time-efficient sintering, using nanosilver dry film and an automatic die pick and place machine, resulting in process times of just a few seconds. The combined parameters of sintering temperature 250 °C, sintering pressure 10 MPa and sintering time 5 s were selected as the benchmark process to attach 2 mm × 2 mm × 0.5 mm dummy Si devices. Then the effects of either the sintering temperature (240 to 300 °C), time (1 to 9 s) or pressure (6 to 25 MPa) on the porosity and shear strength of the sintered joints were investigated with 3 groups and a total of 13 experimental trials. The average porosities of 24.6 to 46.2% and shear strengths of 26.1 to 47.7 MPa are comparable with and/or even better than those reported for sintered joints using wet nanosilver pastes. Their dependences on the sintering temperature, time and pressure are further fitted to equations similar to those describing the kinetics of sintering processes of powder compacts. The equations obtained can be used to not only reveal different mechanisms dominating the densification and bonding strength, but also anticipate the thermal-induced evolutions of microstructures of these rapidly sintered joints during future reliability tests and/or in service.
机译:广泛报道了使用湿式纳米银浆料的压力辅助烧结工艺来连接功率器件,时间尺度为几分钟到几小时。本文介绍了我们使用纳米银干膜和自动芯片拾取和放置机进行高效烧结的工作,从而使处理时间仅为几秒钟。选择烧结温度250°C,烧结压力10 MPa和烧结时间5 s的组合参数作为基准工艺,以安装2 mm×2 mm×0.5 mm的伪Si器件。然后分3组研究了烧结温度(240至300°C),时间(1至9 s)或压力(6至25 MPa)对烧结接头的孔隙率和剪切强度的影响。 13个实验性试验。平均孔隙率为24.6至46.2%,剪切强度为26.1至47.7 MPa,与使用湿法纳米银浆的烧结接头所报告的孔隙率相当,并且/或者甚至更好。它们对烧结温度,时间和压力的依赖性进一步拟合为类似于描述粉末压块烧结过程动力学的方程。所获得的方程式不仅可用于揭示控制致密化和粘结强度的不同机理,而且还可在未来的可靠性测试和/或使用中预测这些快速烧结接头的微观结构的热诱导演化。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号